Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays

被引：0

作者：

Salii, R. A. ^{[1
]}

Mintairov, M. A. ^{[1
]}

Mintairov, S. A. ^{[1
]}

Nakhimovich, M. V. ^{[1
]}

Shvarts, M. Z. ^{[1
]}

Kalyuzhnyy, N. A. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期

关键词：

GaAs; InGaAs; GaP; solar cell; quantum dots; MOVPE; SOLAR-CELLS; LASER;

D O I：

10.18721/JPM.161.170

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, we studied the influence of GaP compensating layers on the characteristics of GaAs solar cells with InGaAs quantum dot arrays. An increase in the overall level of quantum efficiency in the absorption range of quantum dots (870-1000 nm) by more than 10% has been demonstrated when GaP layers are embedded in GaAs intermediate layer (spacer) of a quantum dot array. It was also shown that in this case a noticeable increase in the open-circuit voltage can be achieved at high solar concentration.

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页码：411 / 415

页数：5

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