Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

被引：4

作者：

Kim, Haesung ^{[1
]}

Yoo, Han Bin ^{[1
]}

Lee, Heesung ^{[2
]}

Ryu, Ji Hee ^{[1
]}

Park, Ju Young ^{[1
]}

Han, Seung Hyeop ^{[1
]}

Yang, Hyojin ^{[1
]}

Bae, Jong-Ho ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Kim, Dae Hwan ^{[1
]}

Kim, Dong Myong ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[2] SEC, Memory Business, DRAM PA Team, DRAM Prod & Technol, Pyeongtaek 17786, Gyeonggi, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Thin film transistors; Logic gates; Optimized production technology; Threshold voltage; Substrates; Random access memory; Indium; Amorphous oxide semiconductor-based thin film transistors (AOS TFTS); amorphous indium-gallium-zinc-oxide (a-IGZO)-TFTS; conduction band minimum energy; extraction technique; mobility edge; SUBGAP DOS; CAPACITANCE; STATES;

D O I：

10.1109/TED.2023.3269735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltage (V-CBM) and corresponding energy (E-F,E-CBM = EC-EREF) for the quasi-Fermi level (E-F) equal to the conduction band minimum (E-C) as V-CBM = V-GS (E-F = E-C) and E-F,E-CBM = E-F (V-GS = V-CBM). In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)based thin film transistor was irradiated with various wavelengths and power, and obtained V-CBM = 7.1 V and E-F CBM = 71 meV in the dark state. This technique is expected to be useful in the accurate characterization of the subgap DOS and the effective mobility in AOS TFTs through a simple and effective extraction process.

引用

页码：3126 / 3130

页数：5

共 22 条

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