Effect of P plus Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance

被引：0

作者：

Jeong, Jee-Hun ^{[1
]}

Jang, Min-Seok ^{[1
]}

Seok, Ogyun ^{[2
]}

Lee, Ho-Jun ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Elect Engn, Pusan 46241, South Korea

[2] Kumoh Natl Inst Technol, Sch Elect Engn, Gumi 39177, South Korea

来源：

APPLIED SCIENCES-BASEL | 2023年 / 13卷 / 01期

关键词：

silicon carbide; 4H-SiC; trench-gate MOSFETs; 3D-simulation; design consideration; specific on-resistance; forward blocking; figure-of-merit; DESIGN; 4H;

D O I：

10.3390/app13010107

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square and stripe patterns. Although TMOSFETs with a grid pattern reduce the channel area by approximately 10%, the cell density is increased by approximately 35%. Consequently, the specific on-resistance of the grid pattern is less than that of the square and stripe patterns. The forward blocking characteristics of the grid pattern are increased by the reduced impact ionization rate at the P/N junction. As a result, the figure-of-merit (FOM) of the grid pattern is increased by approximately 33%.

引用

页数：9

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