Performance investigation of Ge-based dielectric modulated junctionless TFET as a label-free biosensor

The current state of affairs requires a highly sensitive, accurate, fast, and power-efficient biosensor. The proposed work investigates the performance of a Germanium-based dielectric-modulated junctionless charge plasma tunnel field-effect transistor (Ge-DMJ-CPTFET) as a label-free biosensor. The nanogap cavity is formed by removing gate oxide material from underneath the source electrode. The target biomolecules are modeled inside the nanogap cavity. The biomolecules are identified using their hereditary properties, such as charge density and dielectric constant. The Dielectric Modulation technique and Charge-Plasma concept have been used to investigate the biomolecules immobilized in the nanogap cavity. Germanium exhibits high carrier mobility and superior tunneling characteristics compared to silicon, allowing for improved charge transport across the device channels. The low energy-band gap of Ge helps to reduce tunneling width and increase drain current. The performance of the proposed device is investigated in terms of band energy, electric field, and electric potential at different values of dielectric constant and charge densities of the biomolecules. Moreover, the Sensitivity of the proposed device is investigated for both neutral and charged biomolecules. Along with a label-free biosensor, Ge-DMJ-CPTFET is free from random dopant variations, low thermal budget, and is compatibility with silicon technology.