Control of magnetization states in full-Heusler Co2FeAl0.5Si0.5 alloy-based MTJ with four-fold anisotropy using VCMA-assisted STT

被引：2
作者：
Belrhazi, Hamza [1 ]
El Hafidi, Mohamed [1 ]
机构：
[1] Hassan II Univ Casablanca, Fac Sci Ben Msik, Dept Phys, Condensed Matter Phys Lab, D El Harty Ave,BP 7955, Casablanca 20165, Morocco
来源：
CURRENT APPLIED PHYSICS | 2023年 / 52卷
关键词：
Spin-transfer torque; VCMA effect; Magnetization switching; Spin-polarized current; Four-fold magnetic anisotropy; Magnetic tunnel junction; MAGNETISM; POWER;
D O I：
10.1016/j.cap.2023.05.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetization switching process in four-fold anisotropy materials is characterized by an intermediate state (IS) due to the interplay between magnetic anisotropy and spin-transfer torque (STT). Practically, the presence of an IS can impede the switching process in a single-step, causing switching errors during data storage. Here, we investigate the STT-induced magnetization switching in the MTJ device based on half-metallic full-Heusler Co2FeAl0.5Si0.5 (CFAS) alloy with four-fold anisotropy in the presence of voltage-controlled magnetic anisotropy (VCMA) using micromagnetic simulation. Our results demonstrate that VCMA-assisted STT can effectively tune the magnetic states during the switching by adjusting the VCMA effect at appropriate intervals and strengths. As a result, the magnetization can overcome the limitations posed by the IS in the CFAS alloy, leading to single-step switching modes for low spin current density. Additionally, we revealed that pulsed voltage-assisted STT results in shorter switching times compared to conventional switching in four-fold anisotropy materials.
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页码：1 / 8
页数：8
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