Modulating the Performance of MoS2-Based Nanocrystal Memory via Ag Ion Implantation

Nonvolatile flash memory is an important component ofthe semiconductormemory device, which is widely used in a variety of portable electronicequipment. As traditional flash memory approaches its physical limit,reduced reliability and performance degradation have become unavoidable.Two-dimensional (2D) layered materials exhibit excellent electronicproperties even at the atomic level and have been considered as apromising development direction for future flash memory. Here, wereport a MoS2-based Ag nanocrystal memory. The fabricatedmemory device can form the memory stack in one step through metalion implantation, omitting tedious deposition steps compared to theconventional process. The fabricated silver nanocrystal memory exhibitsa 9 V memory window and a high ON/OFF current ratio (>10(7)). In addition, the device also exhibits good endurance characteristicsof more than 10(4) cycles. The ion implantation technologyand the 2D nature of the channel can be used for the fabrication offlexible nanoelectronic memory devices with large-scale integration.