A Novel Platform for High-Speed, High-Resolution LIBS Imaging

The latest generation of fast-gated cameras based on scientific CMOS (sCMOS) sensor technology provide significant enhancement in terms of high acquisition rates and simultaneous high dynamic range compared to CCD, Interline or EMCCD-based gated detectors. Gated intensified sCMOS technology enables the development of novel approaches to fast spectroscopy, for example in the context of micro Laser-Induced Breakdown Spectroscopy (mu LIBS) imaging. We present examples of advanced LIBS imaging enabled by this gated sCMOS technology and latest generation of ultra-stable kilohertz Q-switch diode lasers. Spatial resolution down to 10 mu m is achieved by incorporating an automated translation stage. Timing diagrams and triggering schemes for the translation state and intensified camera are discussed. LIBS images with up to 4K definition (3840x2160 pixels), obtained in less than 3 hours, are presented. Such results show the spatially resolved elemental distributions of Si, Fe, Cu, Al, Mg, Ca and Ag for several geological samples, demonstrating the high throughput potential of such approach and the great reduction of experimental time, while preserving chemical information integrity.