Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement

被引:25
作者
Chen, Gengxu [1 ,2 ]
Yu, Xipeng [1 ,2 ]
Gao, Changsong [1 ,2 ]
Dai, Yan [1 ,2 ]
Hao, Yanxue [1 ,2 ]
Yu, Rengjian [1 ,2 ]
Chen, Huipeng [1 ,2 ]
Guo, Tailiang [1 ,2 ]
机构
[1] Fuzhou Univ, Inst Optoelect Display, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Inform, Fujian 350100, Peoples R China
基金
中国国家自然科学基金;
关键词
floating gate phototransistors; perovskite nanocrystals; temperature; multisensory neuromorphic devices; DEPENDENCE; ACTIVATION; MECHANISM; MOBILITY; SYNAPSE; TIO2; SOFT;
D O I
10.1007/s12274-023-5456-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Multi-sensory neuromorphic devices (MND) have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data. However, the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity, which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system. Here, a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors (FGT) is fabricated. The CsPbBr3/TiO2 core-shell nanocrystals (NCs) prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer. The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature. Surprisingly, when the temperature varies from 20 to 120 degrees C back and forth, the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors, which contributes to the efficient visual/thermal fusion perception. This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors (OFET).
引用
收藏
页码:7661 / 7670
页数:10
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