Defect Structure of α-Ga2O3 Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation

被引：0

作者：

Myasoedov, A. V. ^{[1
]}

Pavlov, I. S. ^{[2
]}

Pechnikov, A. I. ^{[1
,3
]}

Stepanov, S. I. ^{[1
,3
]}

Nikolaev, V. I. ^{[1
,3
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Russian Acad Sci, Shubnikov Inst Crystallog Crystallog & Photon, Moscow, Russia

[3] Perfect Crystals LLC, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2023年 / 49卷 / SUPPL 2期

基金：

俄罗斯基础研究基金会;

关键词：

dislocations; gallium oxide; TEM; LAYERS;

D O I：

10.1134/S1063785023900455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of a study by transmission electron microscopy of the structural state of alpha-Ga2O3 film with a thickness of about 1 micron, grown on the prismatic m-face sapphire by the method of chloride vapor phase epitaxy, are presented. The influence of the substrate orientation on the formation of the dislocation structure is discussed. Threading dislocations, including those with the Burgers vector 1/3(1120), and dislocation half-loops are revealed. The inclined propagation of dislocations and the of the threading dislocation density near the surface.

引用

页码：S90 / S93

页数：4

共 16 条

[1] Electrical Properties of Sn-Doped α-Ga2O3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition
Akaiwa, Kazuaki
Ota, Katsuya
Sekiyama, Takahito
Abe, Tomoki
Shinohe, Takashi
Ichino, Kunio
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (03):
[2] Cheng YL, 2020, J ALLOY COMPD, V831
[3] Hirsch PB, 1965, ELECT MICROSCOPY THI
[4] Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers
Jinno, Riena
Uchida, Takayuki
Kaneko, Kentaro
Fujita, Shizuo
[J]. APPLIED PHYSICS EXPRESS, 2016, 9 (07)
[5] Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate
Kaneko, Kentaro
Kawanowa, Hitoshi
Ito, Hiroshi
Fujita, Shizuo
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[6] On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire
Ma, T. C.
Chen, X. H.
Kuang, Y.
Li, L.
Li, J.
Kremer, F.
Ren, F. -F.
Gu, S. L.
Zhang, R.
Zheng, Y. D.
Tan, H. H.
Jagadish, C.
Ye, J. D.
[J]. APPLIED PHYSICS LETTERS, 2019, 115 (18)
[7] Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate
Nikolaev, V. I.
Pechnikov, A. I.
Guzilova, L. I.
Chikiryaka, A. V.
Shcheglov, M. P.
Nikolaev, V. V.
Stepanov, S. I.
Vasil'ev, A. A.
Shchemerov, I. V.
Polyakov, A. Ya.
[J]. TECHNICAL PHYSICS LETTERS, 2020, 46 (03) : 228 - 230
[8] Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition
Oshima, Takayoshi
Nakazono, Taishi
Mukai, Akira
Ohtomo, Akira
[J]. JOURNAL OF CRYSTAL GROWTH, 2012, 359 : 60 - 63
[9] Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Oshima, Y.
Kawara, K.
Shinohe, T.
Hitora, T.
Kasu, M.
Fujita, S.
[J]. APL MATERIALS, 2019, 7 (02):
[10] Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Oshima, Yuichi
Yagyu, Shingo
Shinohe, Takashi
[J]. JOURNAL OF CRYSTAL GROWTH, 2021, 576

← 1 2 →