Engineering piezoelectricity at vdW interfaces of quasi-1D chains in 2D Tellurene

Low-dimensional piezoelectrics have drawn attention to the realization in nano-scale devices with high integration density. A unique branch of 2D Tellurene bilayers formed of weakly interacting quasi-1D chains via van der Waals forces is found to exhibit piezoelectricity due to the semiconducting band gap and spatial inversion asymmetry. Various bilayer stackings are systematically examined using density functional theory, revealing optimal piezoelectricity when dipole arrangements are identical in each layer. Negative piezoelectricity has been observed in two of the stackings AA ' and AA '' while other two stackings exhibit the usual positive piezoelectric effect. The layer-dependent 2D piezoelectricity ( divide e 222D divide ) increases with an increasing number of layers in contrast to the odd-even effect observed in h-BN and MoS2. Notably, the piezoelectric effect is observed in even-layered structures due to the homogeneous stacking in multilayers. Strain is found to enhance in-plane piezoelectricity by 4.5 times (-66.25 x 10-10 C m-1 at -5.1% strain) due to the increasing difference in Born effective charges of positively and negatively charged Te-atoms under compressive biaxial strains. Moreover, out-of-plane piezoelectricity is induced by applying an external electric field, thus implying Tellurene is a promising candidate for piezoelectric sensors.