Curing performance and print accuracy of oxidized SiC ceramic via vat photopolymerization

被引:15
作者
Dong, Wencai [1 ,2 ]
Bao, Chonggao [1 ]
Li, Hao [2 ]
Liu, Rongzhen [1 ,2 ]
Li, Shijia [1 ]
Ma, Haiqiang [3 ]
机构
[1] Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
[2] Natl Inst Corp Addit Mfg, Xian 710117, Shaanxi, Peoples R China
[3] Anhui Polytech Univ, Ctr Adv Ceram, Sch Mat Sci & Engn, Wuhu 241000, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Vat photopolymerization; Print accuracy; Curing performance; SiC ceramic; SILICON-CARBIDE; LIGHT-SCATTERING; SLURRY; MATRIX; TEMPERATURE; SUSPENSIONS; BEHAVIOR; DEPTH; WIDTH;
D O I
10.1016/j.ceramint.2023.06.176
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To improve the print quality of SiC ceramic, an amorphous SiO2 layer is prepared on the surface of SiC by oxidation (SiC@SiO2). The changes in curing depth and width direction of SiC@SiO2 curing sheets with different degrees of oxidation were investigated. The results showed that curing depth increased while curing width decreased with an increasing degree of oxidation. The edge morphologies of SiC@SiO2 curing sheets changed from serration to flat shape with increasing degree of oxidation, and uneven overcuring regions appear in the width direction. Additionally, 12% SiC@SiO2 ceramic was fabricated via vat photopolymerization combined with reaction sintering. The dimensional deviation ratio of printed green bodies increased with decreasing printed line width and pore diameter. The minimum printed line width of 329 mu m and pore diameter of 483 mu m with good print quality were obtained. Furthermore, the flexural strength of 225.4 MPa and bulk density of 2.77 g cm-3 for sintered 12% SiC@SiO2 parts were obtained.
引用
收藏
页码:29595 / 29606
页数:12
相关论文
共 34 条
  • [1] Dense, Strong, and Precise Silicon Nitride-Based Ceramic Parts by Lithography-Based Ceramic Manufacturing
    Altun, Altan Alpay
    Prochaska, Thomas
    Konegger, Thomas
    Schwentenwein, Martin
    [J]. APPLIED SCIENCES-BASEL, 2020, 10 (03):
  • [2] Stereolithography additive manufacturing and sintering approaches of SiC ceramics
    Bai, Xuejian
    Ding, Guojiao
    Zhang, Keqiang
    Wang, Wenqing
    Zhou, Niping
    Fang, Daining
    He, Rujie
    [J]. OPEN CERAMICS, 2021, 5
  • [3] Complex SiC-based structures with high specific strength fabricated by vat photopolymerization and one-step pyrolysis
    Cao, Jiwei
    Idrees, Muhammad
    Tian, Guoqiang
    Liu, Jian
    Xiong, Shufeng
    Yuan, Jingkun
    Wang, Pei
    Liu, Zhiyuan
    Liu, Changyong
    Chen, Zhangwei
    [J]. ADDITIVE MANUFACTURING, 2021, 48
  • [4] A stereolithographic diamond-mixed resin slurry for complex SiC ceramic structures
    Chen, Ruiguang
    Lian, Qin
    He, Xiaoning
    Wang, Jiuhong
    Li, Dichen
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2021, 41 (07) : 3991 - 3999
  • [5] Permeability behavior of silicon carbide-based membrane and performance study for oily wastewater treatment
    Das, Dulal
    Kayal, Nijhuma
    Marsola, Gabriel Antonio
    Damasceno, Leonardo Augusto
    de Mello Innocentini, Murilo Daniel
    [J]. INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2020, 17 (03) : 893 - 906
  • [6] Stereolithography-based additive manufacturing of polymer-derived SiOC/SiC ceramic composites
    Essmeister, Johannes
    Altun, Altan Alpay
    Staudacher, Maximilian
    Lube, Tanja
    Schwentenwein, Martin
    Konegger, Thomas
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2022, 42 (13) : 5343 - 5354
  • [7] Light scattering in absorbing ceramic suspensions: Effect on the width and depth of photopolymerized features
    Gentry, Susan P.
    Halloran, John W.
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2015, 35 (06) : 1895 - 1904
  • [8] Depth and width of cured lines in photopolymerizable ceramic suspensions
    Gentry, Susan P.
    Halloran, John W.
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2013, 33 (10) : 1981 - 1988
  • [9] Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure
    Guo, Zhiyu
    Wu, Jingmin
    Tian, Run
    Wang, Fengxuan
    Xu, Pengfei
    Yang, Xiang
    Fan, Zhongchao
    Yang, Fuhua
    He, Zhi
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (06) : 2879 - 2885
  • [10] Progress and challenges towards additive manufacturing of SiC ceramic
    He, Rujie
    Zhou, Niping
    Zhang, Keqiang
    Zhang, Xueqin
    Zhang, Lu
    Wang, Wenqing
    Fang, Daining
    [J]. JOURNAL OF ADVANCED CERAMICS, 2021, 10 (04) : 637 - 674