Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO2 Thin Films

被引：4

作者：

Atul, Atul ^{[1
]}

Ahmadi, Majid ^{[1
]}

Koutsogiannis, Panagiotis ^{[1
,2
]}

Zhang, Heng ^{[1
]}

Kooi, Bart J. ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands

[2] Univ Zaragoza, Inst Nanociencia & Mat Aragon, CSIC, Zaragoza 50018, Spain

来源：

ADVANCED MATERIALS INTERFACES | 2024年 / 11卷 / 03期

关键词：

metal-insulator transition; pulsed laser deposition; scanning transmission electron microscopy; VO2 epitaxial thin films; METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; OPTICAL-PROPERTIES; PHASE-TRANSITION; MICROSTRUCTURE; TEMPERATURE; STRESS; SEMICONDUCTOR; DEPENDENCE; THICKNESS;

D O I：

10.1002/admi.202300639

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The metal-insulator transition (MIT) observed in vanadium dioxide has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behavior is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, scanning transmission electron microscopy (STEM) is used to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. The overall film quality and structures on atomic and nanoscale are linked to the electrical transition characteristics. Relatively poor MIT characteristics are observed on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favorably, despite similar stress relaxation which, however, only leads to domain boundaries but no cracks.

引用

页数：13

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