Novel 1-φ High-Voltage Boosting Transformerless Inverter Topology With Optimal Power Components and Negligible Leakage Currents

Inverter topologies for integrating a rooftop photovoltaic (PV) unit into a microgrid are becoming increasingly complex. This paper proposes a high-voltage boosting transformerless inverter (HVBTI) topology for enhancing such applications. The coupled inductor-based high voltage gain feature of the HVBTI configuration allows power to be delivered into the grid from a lower voltage PV source without using higher duties. In addition, HVBTI suppresses leakage current as the common connection shared between the -ve terminal of the PV source and the grid neutral point. In comparison to existing topologies, the HVBTI topology uses a compact pulse widthmodulation strategy to control only six controllable switching devices. Again, using lower-rated switching devices is more cost-effective while increasing reliability and efficiency. In a laboratory prototype of a 1 kVA grid integrated system, the proposed HVBTI configuration is validated, and the maximum efficiency of the HVBTI is estimated at approximately 95%.