Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers

Molybdenum disulfide (MoS2) is a typical semiconductor two-dimensional atomic crystal material, which has excellent physical and electrical properties and so shows great potential in Nano-electronic and optical applications. The regulation of channel characteristics is a key problem in practical application. In this paper, the MoS2 FET are studied with respect to the number of MoS2 layers in the channel. In the study of direct tunneling characteristics, the effects of image potential and no parabolic linearity of the energy band are considered. The results show that with the increase in the number of MoS2 layers, the direct tunneling current increases and the threshold voltage decreases. In addition, a MoS2 FET with a single layer MoS2 structure can obtain a low subthreshold swing (70 mV/dec). MoS2-based devices can solve the problem that the switching speed of traditional silicon-based devices cannot be effectively improved at the nanoscale. Our results show that varying MoS2 layers could regulate the channel characteristics and improve its performance.