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- [1] Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 471 - 474Xiao, Ming论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaZhang, Weihang论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaZhang, Yuhao论文数: 0 引用数: 0 h-index: 0机构: Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24061 USA Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaZhou, Hong论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaDang, Kui论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaZhang, Jincheng论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R ChinaHao, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China
- [2] Normally-off GaN MOSFETs on insulating substrateSOLID-STATE ELECTRONICS, 2013, 90 : 79 - 85Kim, Dong-Seok论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaIm, Ki-Sik论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaKim, Ki-Won论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaKang, Hee-Sung论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaKim, Do-Kywn论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Minatec, IMEP IAHC, Grenoble Inst Technol, F-38016 Grenoble 1, France Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaChang, Sung-Jae论文数: 0 引用数: 0 h-index: 0机构: Minatec, IMEP IAHC, Grenoble Inst Technol, F-38016 Grenoble 1, France Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaBae, Youngho论文数: 0 引用数: 0 h-index: 0机构: Uiduk Univ, Dept Elect Engn, Gyeongju, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaHahm, Sung-Ho论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaCristoloveanu, Sorin论文数: 0 引用数: 0 h-index: 0机构: Minatec, IMEP IAHC, Grenoble Inst Technol, F-38016 Grenoble 1, France Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South KoreaLee, Jung-Hee论文数: 0 引用数: 0 h-index: 0机构: Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea
- [3] DC & RF Characteristics of normally-off AlN/GaN MOSHEMT by varying Oxide ThicknessPROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 399 - 402论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Dash, G. N.论文数: 0 引用数: 0 h-index: 0机构: Sambalpur Univ, Sch Phys, Sambalpur 768019, Odisha, India Natl Inst Technol, Microelect & VLSI Grp, Dept ECE, Silchar 788010, Assam, IndiaPanda, A. K.论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Sci & Technol, Dept ECE, Palur Hills, Berhampur 761008, Orissa, India Natl Inst Technol, Microelect & VLSI Grp, Dept ECE, Silchar 788010, Assam, India
- [4] AlN/GaN Heterostructures for Normally-Off TransistorsSEMICONDUCTORS, 2017, 51 (03) : 379 - 386Zhuravlev, K. S.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia Novosibirsk State Univ, Ul Pirogova 2, Novosibirsk 630090, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaMalin, T. V.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaMansurov, V. G.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaTereshenko, O. E.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia Novosibirsk State Univ, Ul Pirogova 2, Novosibirsk 630090, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaAbgaryan, K. K.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Dorodnicyn Comp Ctr, Ul Vavilova 40, Moscow 119333, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaReviznikov, D. L.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Dorodnicyn Comp Ctr, Ul Vavilova 40, Moscow 119333, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaZemlyakov, V. E.论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ Elect Technol MIET, 4806 Proezd 5, Moscow 124498, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaEgorkin, V. I.论文数: 0 引用数: 0 h-index: 0机构: Natl Res Univ Elect Technol MIET, 4806 Proezd 5, Moscow 124498, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaParnes, Ya. M.论文数: 0 引用数: 0 h-index: 0机构: Joint Stock Co Svetlana Electronpribor, Pr Engelsa 27,Korp 164, St Petersburg 194156, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaTikhomirov, V. G.论文数: 0 引用数: 0 h-index: 0机构: Joint Stock Co Svetlana Electronpribor, Pr Engelsa 27,Korp 164, St Petersburg 194156, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, RussiaProsvirin, I. P.论文数: 0 引用数: 0 h-index: 0机构: Russian Acad Sci, Boreskov Inst Catalysis, Siberian Branch, Pr Akad Lavrenteva 5, Novosibirsk 630090, Russia Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia
- [5] Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTsAIP ADVANCES, 2020, 10 (10)Lin, Runze论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaZhao, Desheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nano Fabricat Facil, Suzhou 215123, Jiangsu, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaYu, Guohao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nano Fabricat Facil, Suzhou 215123, Jiangsu, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaLiu, Xiaoyan论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaWu, Dongdong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nano Fabricat Facil, Suzhou 215123, Jiangsu, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaGu, Erdan论文数: 0 引用数: 0 h-index: 0机构: Univ Strathclyde, Inst Photon, Glasgow G1 1RD, Lanark, Scotland Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaCui, Xugao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaLiu, Ran论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaZhang, Baoshun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nano Fabricat Facil, Suzhou 215123, Jiangsu, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R ChinaTian, Pengfei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China Fudan Univ, Sch Informat Sci & Technol, Inst Elect Light Sources, Shanghai 200433, Peoples R China
- [6] ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION2015 International Symposium on Next-Generation Electronics (ISNE), 2015,Tsai, Jung-Ruey论文数: 0 引用数: 0 h-index: 0机构: Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, Taiwan China Med Univ, China Med Univ Hosp, Dept Med Res, Taichung 40447, Taiwan Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, TaiwanChang, Yi-Sheng论文数: 0 引用数: 0 h-index: 0机构: Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, Taiwan Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, TaiwanWei, Kuo-Shu论文数: 0 引用数: 0 h-index: 0机构: Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, Taiwan Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, TaiwanWen, Ting-Ting论文数: 0 引用数: 0 h-index: 0机构: Natl Chiao Tung Univ, Nano Facil Ctr, Hsinchu 300, Taiwan Asia Univ, Dept Photon & Commun Engn, 500 Lioufeng Rd, Taichung 41354, Taiwan
- [7] Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTsJAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (08)Tokuda, Hirokuni论文数: 0 引用数: 0 h-index: 0机构: Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, JapanAsubar, Joel T.论文数: 0 引用数: 0 h-index: 0机构: Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, JapanKuzuhara, Masaaki论文数: 0 引用数: 0 h-index: 0机构: Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan
- [8] Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 65 - 68Xuan, L. Trinh论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceAubry, R.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceMichel, N.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FrancePatard, O.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceJacquet, J. -C.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FrancePiotrowicz, S.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceOualli, M.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceGamarra, P.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FrancePotier, C.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceLancereau, D.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceDelage, S. L.论文数: 0 引用数: 0 h-index: 0机构: III V Lab, Palaiseau, France III V Lab, Palaiseau, FranceLaurent, S.论文数: 0 引用数: 0 h-index: 0机构: Univ Limoges, CNRS, XLIM Lab, Limoges, France III V Lab, Palaiseau, FranceBouysse, P.论文数: 0 引用数: 0 h-index: 0机构: Univ Limoges, CNRS, XLIM Lab, Limoges, France III V Lab, Palaiseau, FranceQuere, R.论文数: 0 引用数: 0 h-index: 0机构: Univ Limoges, CNRS, XLIM Lab, Limoges, France III V Lab, Palaiseau, France
- [9] Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layerJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (02)Xing, Zhanyong论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaZhang, Haochen论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaSun, Yue论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaYang, Lei论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaHu, Kunpeng论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaLiang, Kun论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaWang, Dawei论文数: 0 引用数: 0 h-index: 0机构: Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaFu, Houqiang论文数: 0 引用数: 0 h-index: 0机构: Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R ChinaSun, Haiding论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China Univ Sci & Technol China, Sch Microelect, Anhui 230026 Peoples Republ China, Hefei, Peoples R China
- [10] Normally-off GaN Transistors for Power ApplicationsMICROTHERM' 2013 - MICROTECHNOLOGY AND THERMAL PROBLEMS IN ELECTRONICS, 2014, 494Hilt, O.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyBahat-Treidel, E.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyBrunner, F.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyKnauer, A.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyZhytnytska, R.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyKotara, P.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, GermanyWuerfl, J.论文数: 0 引用数: 0 h-index: 0机构: Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany Ferdinand Braun Inst, Leibniz Inst Hoechstfrequenztech, D-12489 Berlin, Germany