Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications

被引:0
|
作者
Dwidar, Mahmud [1 ,2 ]
Ofiare, Afesomeh [1 ]
Wasige, Edward [1 ]
Al-Khalidi, Abdullah [1 ]
机构
[1] Univ Glasgow, James Watt Sch Engn, High Frequency Elect Grp, Glasgow, Lanark, Scotland
[2] Kafrelsheikh Univ, Inst Nanosci & Nanotechnol, Kafr Al Sheikh, Egypt
来源
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词
Ultra low DIBL; AlN/GaN HEMTs; normally-off; enhancement mode; low damage; T-gate; W-band; f(T)/f(max); BREAKDOWN VOLTAGE; THRESHOLD VOLTAGE; DEPLETION-MODE; GAN; ENHANCEMENT; PERFORMANCE; DESIGN;
D O I
10.23919/EuMIC58042.2023.10288918
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, normally-off, aluminium nitride (AlN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) were successfully fabricated with T-gate structures. GaN HEMTs with AlN barriers and 70 nm T-gates exhibited +0.62 V of threshold voltage (V-th), 1.15 mV/V of drain induced barrier lowering (DIBL), and f(T)/f(max) of 89/232 GHz. This is a fundamental step towards realising W-band amplifiers for wireless communications applications.
引用
收藏
页码:54 / 57
页数:4
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