ITO Thin Films for Low-Resistance Gas Sensors

被引：8

作者：

Almaev, Aleksei V. V. ^{[1
,2
]}

Kopyev, Viktor V. V. ^{[1
]}

Novikov, Vadim A. A. ^{[1
]}

Chikiryaka, Andrei V. V. ^{[3
]}

Yakovlev, Nikita N. N. ^{[1
]}

Usseinov, Abay B. B. ^{[4
]}

Karipbayev, Zhakyp T. T. ^{[4
]}

Akilbekov, Abdirash T. T. ^{[4
]}

Koishybayeva, Zhanymgul K. K. ^{[4
]}

Popov, Anatoli I. I. ^{[4
,5
]}

机构：

[1] Natl Res Tomsk State Univ, Res & Dev Ctr Adv Technol Microelect, Tomsk 634050, Russia

[2] Fokon LLC, Kaluga 248035, Russia

[3] Ioffe Inst Russian Acad Sci, St Petersburg 194021, Russia

[4] LN Gumilyov Eurasian Natl Univ, Fac Phys & Tech Sci, Astana 010008, Kazakhstan

[5] Univ Latvia, Inst Solid State Phys, 8 Kengaraga Str, LV-1063 Riga, Latvia

来源：

MATERIALS | 2023年 / 16卷 / 01期

关键词：

indium tin oxide; thin films; gas sensors; OPTICAL-PROPERTIES; SNO2; FABRICATION; INTERFACE;

D O I：

10.3390/ma16010342

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 degrees C and 600 degrees C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 degrees C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 degrees C. Indium tin oxide thin films annealed at 500 degrees C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 degrees C, 350 degrees C and 350 degrees C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.

引用

页数：16

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