Improving electrical transport properties of AlGaN/GaN heterostructure using AlSiN passivation

被引：2
|
作者：
Liu, Fengfeng [1 ,2 ]
Li, Yuxiong [1 ,2 ]
Sui, Zhanpeng [2 ]
Wang, Hanbin [3 ]
Luo, Yi [3 ]
Jiang, Chunping [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Microsyst & Terahertz Res Ctr, Micro Nano Fabricat Lab, Chengdu 610200, Peoples R China
来源：
MATERIALS LETTERS | 2023年 / 331卷
关键词：
Amorphous materials; Dielectrics; AlGaN; GaN heterostructure; GAN;
D O I：
10.1016/j.matlet.2022.133522
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlGaN/GaN heterostructures have been widely used in modern high power and high frequency device appli-cations due to their excellent material characteristics. However, the existence of surface damages, defects and dislocations may degrade the device features. Here, we report the effect of AlSiN surface passivation on electrical transport properties in AlGaN/GaN heterostructure. Compared with the unpassivated, AlN and AlBN passivated AlGaN/GaN, better transport properties have been observed in the AlSiN passivated samples. Both the density and mobility increase in the AlSiN passivated AlGaN/GaN, which may be attributed to the influence of the AlGaN/GaN interface barrier height and suppression of trapping effects. The results show that AlSiN dielectric films is a very promising candidate as surface passivation for AlGaN/GaN HEMTs.
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页数：4
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