Refined thermal stability of Cr/Sc multilayers with Si(Be) barrier layers

Effect of Si and Be barrier layers on the intermixing of thin Cr and Sc layers, as-deposited and after annealing in a wide range of temperatures was considered using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), X-ray reflectometry (XRR) and grazing-incidence X-ray diffraction (GIXRD). It was established that annealing of a Si/[Cr/Sc]200 system increases mixing. In the sample heated at a temperature of 450 degrees C during 1h as a result of a full intermixing of the Cr and Sc layers a segregation of scandium on the sample surface is traced. The structure becomes textured with Sc [001] preferred orientation perpendicular to the substrate. The insertion of the Be barrier layer in the Si/[Cr/Sc]200 system limits the intermixing between chromium and scandium layers during annealing at temperatures up to 350 degrees C, but full degradation of the structure occurs at 450 degrees C. Be barrier layer in the Cr/Sc system prevents a texturing and grain growth in the system, but does not oppose the crystallization process. A silicon layer inserted between the scandium and chromium layers restricts their intermixing. The multilayer retains an amorphous structure.