Controllable Phase Transition Properties in VO2 Films via Metal-Ion Intercalation

被引:17
作者
He, Zihao [1 ]
Qi, Zhimin [2 ]
Yang, Bo [2 ]
Lu, Ping [3 ]
Shen, Jianan [2 ]
Dilley, Neil R. [4 ]
Zhang, Xinghang
Wang, Haiyan [1 ,2 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
VO2; lithiation; transition temperature tuning; structural deformation; charge carrier density; DIOXIDE THIN-FILMS; VANADIUM DIOXIDE; INSULATOR-TRANSITION; LI INTERCALATION; TEMPERATURE; NANORODS; MO;
D O I
10.1021/acs.nanolett.2c03286
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
VO2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room -temperature, effective transition temperature (Tc) tuning in VO2 is desired. In this study, tailorable SMT characteristics in VO2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li+ during the intercalation process, Tc of VO2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective Tc tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.
引用
收藏
页码:1119 / 1127
页数:9
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