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Mn2+-Activated Photostimulable Persistent Nanophosphors by Pr3+ Codoping for Rewritable Information Storage
被引:13
作者:

Gao, Feng
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Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Pang, Qing
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Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Gao, Dangli
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机构:
Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Jia, Chaoyang
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Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Xin, Hong
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Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Pan, Yong
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Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Wang, Yuhua
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h-index: 0
机构:
Lanzhou Univ, Sch Mat & Energy, Natl & Local Joint Engn Lab Opt Convers Mat & Tech, Natl Dev & Reform Commiss, Lanzhou 730000, Gansu, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China

Yun, Sining
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h-index: 0
机构:
Xian Univ Architecture & Technol, Sch Mat Sci & Engn, Funct Mat Lab FML, Xian 710055, Shaanxi, Peoples R China Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China
机构:
[1] Xian Univ Architecture & Technol, Coll Sci, Xian 710055, Shaanxi, Peoples R China
[2] Lanzhou Univ, Sch Mat & Energy, Natl & Local Joint Engn Lab Opt Convers Mat & Tech, Natl Dev & Reform Commiss, Lanzhou 730000, Gansu, Peoples R China
[3] Xian Univ Architecture & Technol, Sch Mat Sci & Engn, Funct Mat Lab FML, Xian 710055, Shaanxi, Peoples R China
基金:
中国国家自然科学基金;
关键词:
photostimulable luminescence;
nonequivalent doping;
trap engineering;
Zn2GeO4;
Mn2+;
Pr3+;
optical information storage;
THERMAL QUENCHING MECHANISM;
LUMINESCENCE PROPERTIES;
ELECTRONIC-STRUCTURE;
TRAP DEPTH;
PHOSPHORS;
ENERGIES;
ULTRAVIOLET;
HOST;
CE3+;
DY;
D O I:
10.1021/acsanm.2c05552
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Photostimulable luminescence (PSL) nanophosphors, which exhibit superior features including controllable energy storage and efficient photon release upon light stimulation, are desirable for optical signal storage. However, trap tuning of the storage phosphor remains a great challenge. Herein, the PSL of Zn2GeO4:Mn2+ nanophosphors is enhanced via creating deep traps through nonequivalent Pr3+ doping. The possible enhanced mechanisms are analyzed combined with doping models using the first-principles theory. A mechanism is proposed based on changing the coordination environment of Mn2+, creating deep traps and tuning the band gap structure, and thus providing the chance for electrons' photoionization and PSL generation. As a result, the prepared nanophosphors demonstrate the superior functionalities for optical signal storage. This work not only offers an insight into defect engineering through doping strategies for developing PSL materials but also supplies a good candidate for optical information storage.
引用
收藏
页码:3054 / 3064
页数:11
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