Nanowires for UV-vis-IR Optoelectronic Synaptic Devices

被引:105
作者
Chen, Xue [1 ]
Chen, Bingkun [2 ]
Jiang, Bei [3 ]
Gao, Tengfei [4 ]
Shang, Gang [1 ]
Han, Su-Ting [5 ]
Kuo, Chi-Ching [6 ]
Roy, Vellaisamy A. L. [7 ]
Zhou, Ye [8 ]
机构
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
[2] Harbin Engn Univ, Coll Phys & Optoelect Engn, Harbin 150001, Peoples R China
[3] Hubei Univ, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
[4] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
[5] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[6] Natl Taipei Univ Technol, Res & Dev Ctr Smart Text Technol, Inst Organ & Polymer Mat, Taipei 10608, Taiwan
[7] Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Lanark, Scotland
[8] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
nanowires; neuromorphic applications; optoelectronic synapse; synaptic functionalities; UV-vis-IR; FIELD-EFFECT TRANSISTOR; NEGATIVE PHOTOCONDUCTANCE; ELECTRONIC-STRUCTURE; INAS NANOWIRES; GROWTH; GAAS; PHOTODETECTOR; SYNAPSES; MEMORY; GAP;
D O I
10.1002/adfm.202208807
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV-vis-IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.
引用
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页数:30
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