Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells

被引：5

作者：

Alcer, David ^{[1
]}

Tirrito, Matteo ^{[1
]}

Hrachowina, Lukas ^{[1
]}

Borgstrom, Magnus T. ^{[1
]}

机构：

[1] Lund Univ, NanoLund & Div Solid State Phys, S-22100 Lund, Sweden

来源：

ACS APPLIED NANO MATERIALS | 2024年 / 7卷 / 02期

关键词：

nanowire solar cell; GaInP; InP; tandemjunction; photovoltaics; SPECTRAL RESPONSE MEASUREMENTS; GROWTH DYNAMICS; EFFICIENCY; INP; GAAS; ABSORPTION; DESIGN; ARRAYS;

D O I：

10.1021/acsanm.3c05909

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm(2), which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.

引用

页码：2352 / 2358

页数：7

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