Optically Triggered Self-Adaptive Zero Voltage Switching

被引:3
作者
Hu, Borong [1 ]
Jiang, Yunlei [1 ]
Shillaber, Luke [1 ]
Wang, Hengyu [2 ]
Li, Chengmin [3 ]
Long, Teng [1 ]
机构
[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
[2] Zhejiang Univ, Coll Elect Engn, Hangzhou 310058, Peoples R China
[3] Swiss Fed Inst Technol, Power Elect Lab, Lausanne 1015, Switzerland
关键词
Critical conduction mode (CRM); electroluminescence (EL); silicon carbide (SiC); triangular conduction mode (TCM); zero voltage switching (ZVS); POWER MOSFETS;
D O I
10.1109/TPEL.2023.3290113
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zero voltage switching (ZVS) is useful to increase power electronics efficiency but difficult to achieve due to the nonlinear parasitic capacitance of the power semiconductors and varying load current. This letter proposes a self-adaptive ZVS method by using the intrinsic electroluminescence (EL) property of SiC mosfets to automatically adjust the switching frequency in every switching cycle to retain the optimal ZVS in varying load current. A sensing circuit is developed to digitally utilize the EL to trigger ZVS and embodied in a customized PCB-embedded half-bridge power module. Experimental results demonstrate the effectiveness of the proposed optically triggered self-adaptive ZVS in a Buck converter. The proposed method is compatible with conventional PWM gate drives for various power electronic devices and applications.
引用
收藏
页码:10600 / 10605
页数:6
相关论文
共 16 条
  • [1] Biela J., 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P1709, DOI 10.1109/IPEC.2010.5542042
  • [2] Bruccoleri F., 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), P406, DOI 10.1109/ISSCC.2002.993104
  • [3] Hardy Casey, 2023, 2023 IEEE International Solid- State Circuits Conference (ISSCC), P182, DOI 10.1109/ISSCC42615.2023.10067315
  • [4] Hrish N., 2019, U.S. Patent, Patent No. 20190199240
  • [5] Huang Q., 2017, CPSS Transactions on Power Electronics and Applications, V2, P187
  • [6] ZVS of Power MOSFETs Revisited
    Kasper, Matthias
    Burkart, Ralph M.
    Deboy, Gerald
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (12) : 8063 - 8067
  • [7] Online Junction Temperature Extraction of SiC Power MOSFETS With Temperature Sensitive Optic Parameter (TSOP) Approach
    Li, Chengmin
    Luo, Haoze
    Li, Chushan
    Li, Wuhua
    Yang, Huan
    He, Xiangning
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (10) : 10143 - 10152
  • [8] Ultraflat Interleaved Triangular Current Mode (TCM) Single-Phase PFC Rectifier
    Marxgut, Christoph
    Krismer, Florian
    Bortis, Dominik
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (02) : 873 - 882
  • [9] Quadrilateral Current Mode Paralleling of Power MOSFETs for Zero-Voltage Switching
    Shen, Yanfeng
    Jiang, Yunlei
    Zhao, Hui
    Shillaber, Luke
    Jiang, Chaoqiang
    Long, Teng
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (05) : 5997 - 6014
  • [10] Sun JJ, 2019, IEEE ENER CONV, P4421, DOI [10.1109/ecce.2019.8912203, 10.1109/ECCE.2019.8912203]