Investigating the Effect of Electromagnetic Fault Injections on the Configuration Memory of SRAM-based FPGA Devices

被引：1

作者：

Proulx, Alexandre ^{[1
]}

Thibodeau, Jacob ^{[1
]}

Bourgault, Bastien ^{[1
]}

Chouinard, Jean-Yves ^{[1
]}

Miled, Amine ^{[1
]}

Fortier, Paul ^{[1
]}

机构：

[1] Univ Laval, Dept Elect & Comp Engn, Laval, PQ, Canada

来源：

2023 IEEE PHYSICAL ASSURANCE AND INSPECTION OF ELECTRONICS, PAINE | 2023年

基金：

加拿大自然科学与工程研究理事会;

关键词：

FPGA; EMFI; SRAM; SEU; SET; SIDE-CHANNEL ATTACKS;

D O I：

10.1109/PAINE58317.2023.10317982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analysis of the impact of Electromagnetic Fault Injections (EMFI) on the behaviour of Field-Programmable Gate Arrays (FPGA). We investigate how EMFIs affect the FPGA's configuration memory and fabric. Using a specialized EMFI apparatus and a custom-built test bench, we perform a series of tests and discuss the accuracy and precision achieved with this equipment and its impact on device security. Furthermore, we use the FPGA's readback capability along with bitstream reverse-engineering techniques to analyze and confirm the impact of EMFIs.

引用

页码：164 / 170

页数：7

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