The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications

被引:0
作者
Lin, Hong-Yi [1 ]
Basu, Nilabh [2 ]
Lee, Min-Hung [3 ]
Chen, Sheng-Chi [4 ,5 ,6 ]
Liao, Ming-Han [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Mech Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Sch Adv Technol, Taipei 10617, Taiwan
[3] Natl Taiwan Normal Univ, Grad Inst Electroopt Sci & Technol, Taipei 10617, Taiwan
[4] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243303, Taiwan
[5] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol, Taipei 243303, Taiwan
[6] Chang Gung Univ, Coll Engn, Taoyuan 33302, Taiwan
关键词
carbon nanotubes; low temperature; thermal conductivity; package; TUBES;
D O I
10.3390/coatings13050965
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), and Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate the growth of CNTs by a thermal chemical vapor deposition (TCVD) process at both 350 degrees C and 400 degrees C. Based on scanning electron microscopy (SEM) and Raman spectroscopy analyses, the good quality of the CNTs is demonstrated. This study contributes to the on-going research on integrating semiconductors into packaging and power-related applications, as demonstrated with the low resistance (similar to 128 Omega) and high thermal conductivity (similar to 29.8 Wm(-1) K-1) of our developed CNTs.
引用
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页数:7
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