Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

被引：12

作者：

Gucmann, Filip ^{[1
]}

Nadazdy, Peter ^{[1
]}

Husekova, Kristina ^{[1
]}

Dobrocka, Edmund ^{[1
]}

Priesol, Juraj ^{[2
]}

Egyenes, Fridrich ^{[1
]}

Satka, Alexander ^{[2
]}

Rosova, Alica ^{[1
]}

Tapajna, Milan ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Fac Elect Engn & Informat Technol, Ilkovova 3, Bratislava 81219, Slovakia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2023年 / 156卷

关键词：

Gallium oxide; Thermal stability; MOCVD; Degradation; GALLIUM OXIDE; FILMS; CATHODOLUMINESCENCE;

D O I：

10.1016/j.mssp.2022.107289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the thermal stability of single-phase undoped epitaxial rhombohedral alpha-and bi-axially-symmetric, monoclinic beta-Ga2O3 thin films grown on sapphire substrates by liquid-injection metalorganic chemical vapor deposition (LI-MOCVD) by means of in-situ high-temperature X-ray diffraction (HT-XRD) and room temperature (RT) cathodoluminescence (CL). Ga2O3 layers were vacuum annealed up to 1100 degrees C, while monitoring the respective 3030 and 603 reflections of alpha-and beta-phase Ga2O3. alpha-Ga2O3 layers were found to withstand the vacuum annealing at 700 degrees C/20 min, 750 degrees C/10 min, and 800 degrees C/8 min without notable degradation, however an indication of reversible biaxial in-plane compressive strain was observed for annealing temperatures close to 800 degrees C. Annealing at temperatures above 825 degrees C led to complete layer degradation and partial phase trans-formation to (010) beta-Ga2O3. beta-Ga2O3 layers showed no notable degradation or structural changes after the annealing at 1100 degrees C/30 min, however an indication of reversible biaxial in-plane tensile strain was observed for prolonged annealing at 1100 degrees C. RT CL spectra revealed the Ga2O3 emission consisted of several distinctive luminescence bands (red, green, blue, and two UV bands). Relatively weak but distinctive signal maxima with energy close to the expected bandgap energies of alpha-and beta-Ga2O3, at 5.3 and 5.0 eV, respectively, were observed and attributed to their near band-edge (NBE) emissions.

引用

页数：9

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