Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

被引：10
作者：
Zhu, Xudong [1 ,2 ]
Chen, Yuqian [1 ,2 ]
Liu, Zheng [1 ,2 ]
Han, Yulei [3 ]
Qiao, Zhenhua [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, ICQD, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China
[3] Fuzhou Univ, Dept Phys, Fuzhou 350108, Peoples R China
来源：
FRONTIERS OF PHYSICS | 2023年 / 18卷 / 02期
基金：
中国国家自然科学基金;
关键词：
quantum anomalous Hall effect; valley polarization; topological valleytronics; transition metal dichalcogenides; jacutingaite family materials; first-principles calculations; van der Waals heterostructure; FERROMAGNETISM; SPINTRONICS; ELECTRONICS; EXCHANGE; CRYSTAL; STATES; VALVE; WSE2; BR; CL;
D O I：
10.1007/s11467-022-1228-4
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt(2)AX(3) (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt(2)AX(3) and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt2HgS3/NiBr2, Pt2HgSe3/CoBr2, Pt2HgSe3/NiBr2, and Pt2ZnS3/CoBr2, with a maximum valley splitting of 134.2 meV in Pt2HgSe3/NiBr2 and sizable global band gap of 58.8 meV in Pt2HgS3/NiBr2. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.
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收藏
页数：12
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