Investigation of Resistive Switching of Insulating Hafnium Nitride for Nonvolatile Memory Applications

被引：0
|
作者：
Do, Hoang Bao Chau [1 ]
Chung, Chin-Han [1 ]
Mai, Thi Thu [2 ]
Prasad, Om Kumar [1 ]
Jagga, Deepali [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 02期
关键词：
memory; sputtering; thin film growth; XPS;
D O I：
10.1149/2162-8777/ad2aed
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, nitrogen-rich Hafnium Nitride (HfN) featuring insulating properties was investigated for achieving resistive switching, crucial for the functionality of resistive random-access memory (ReRAM) devices. Devices were fabricated with a 15-nm HfN resistive switching layer using a Radio Frequency (RF) sputtering system. The fabricated devices successfully exhibited a bipolar switching characteristic with a high On/Off ratio (up to 104). An interesting 2-step behavior was also observed during the formation of the conduction filament which was suspected to be tied to the migration of the nitrogen ions. This is the first attempt at using HfN as the resistive switching material for nonvolatile memory applications.
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页数：6
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