Adjusting Ag deposition power to improve corrosion resistance of ITO/Ag/ ITO film for gate driver on array

Gate Driver on Array (GOA) can fulfil narrow-frame full screen of display device, but may encounter throughhole burnout during operation due to electrochemical corrosion under high-temperature and high-humidity environments. Through-hole burnout originates from vapor that penetrates display sealant and invades signalconducting through-hole in GOA, and results from action of electrochemistry and Joule heat. In this work, ITO/Ag/ITO films were deposited by direct current (DC) sputtering using ITO and Ag targets. This work attempts to reduce electrical resistivity, while limiting electrochemical corrosion of film by adjusting Ag deposition power. We found that high crystallinity and smooth morphology can inhibit vapor accumulation for Ag film prepared at a power of 8 kW, along with favorable sheet resistance and etching slope angle as low as 0.31 omega/sq and 73.1 degrees, respectively. Such film can run normally for 200 h in field test at a temperature of 85 degrees C and a humidity of 85 % with absence of through-hole corrosion. The outcomes of this work pave the way for industrial application of the narrow-frame full screen with virtues of both low resistance value and electrochemical corrosion resistance.