Generalized Architecture of a GaN-Based Modular Multiport Multilevel Flying Capacitor Converter

被引:2
作者
Elrais, Mohamed Tamasas [1 ]
Safayatullah, Md [1 ]
Batarseh, Issa [1 ]
机构
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
关键词
Voltage; Capacitors; High-voltage techniques; Bidirectional control; Multilevel converters; Frequency conversion; Switches; capacitor voltages self-balancing; FCML; flying capacitor multilevel converters; four-port converter; gallium nitride switches; GaN; high power density converters; modular converters; multilevel converters; multiport converters; phase shifted PWM (PSPWM) modulation; three-port inverter; DC-DC CONVERTER; ENERGY-STORAGE; RENEWABLE ENERGY; INTERLEAVED-BOOST; VOLTAGE; TOPOLOGIES; INTEGRATION; INVERTER; DESIGN;
D O I
10.1109/TPEL.2023.3269800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a generalized gallium nitride (GaN)-based modular multiport multilevel flying capacitor architecture. In other words, the attractive flying capacitor multilevel (FCML) design and the full-bridge unfolding circuit are employed to develop a multiport multilevel converter architecture that fits various applications. Each module can be designed to contain any combination of AC and DC ports connected through DC-to-DC and DC-to-AC power conversion paths. These conversion paths are FCML topologies that can be designed with any number of levels; the DC-to-AC paths incorporate the full-bridge unfolding circuit. Two example prototypes with open-loop control, three-port and four-port, have verified this generalized architecture. A singlemodule 3-kW three-port four-level prototype with two DC ports and an AC port has achieved a compact size of 11.6 in3 (4.8 inx4.3 in x 0.56 in) and a high power density of 258.6 W/in3. The three ports are connected through DC-to-AC and DC-to-DC paths that have achieved peak efficiencies of 98.2% and 99.43%, respectively. The total harmonic distortion of the AC port's voltage and current are 1.26% and 1.23%, respectively. It operates at a high switching frequency of 120 kHz because of the GaN switches and has an actual frequency (inductor's ripple frequency) of 360 kHz thanks to the frequency multiplication effect of the FCML. The four-port prototype contains three dc ports and an AC port and achieved similar high figures of merit. These experimental results of the two prototypes of high efficiency, power density, and compact size are presented in this article and highlight this architecture's promising potential. The choice of the number of modules, ports, and levels depends on the application and its specification; therefore, this proposed generalized structure may serve as a reference design approach for various applications of interest.
引用
收藏
页码:9818 / 9838
页数:21
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