A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics

被引：2
作者：
Gonzalez, Benito [1 ]
Nunes, Luis C. [2 ]
Gomes, Joao L. [2 ,3 ]
Mendes, Joana C. [2 ]
Jimenez, Jose L.
机构：
[1] Univ Palmas Gran Canaria, Inst Appl Microelect, Campus Univ Tafira, Las Palmas Gran Canaria 35017, Spain
[2] Univ Aveiro, Inst Telecomunicacoes, Dept Eletron Telecomunicacoes & Informat DETI, P-3810193 Aveiro, Portugal
[3] Qorvo Inc, Richardson, TX 75080 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 06期
关键词：
Thermal resistance; MODFETs; HEMTs; Temperature measurement; Logic gates; Power dissipation; Data mining; Pulse recovery data; electrothermal characterization; trapping; gallium nitride; high-electron-mobility transistors (HEMTs); thermal resistance; ALGAN/GAN HEMTS; TIME CONSTANTS; TEMPERATURE;
D O I：
10.1109/LED.2023.3265766
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. After the device temperature and trapping state are established from different quiescent power dissipations for several base-plate temperatures, the recovery profile of the drain current is measured. The recovery time is then used as a temperature-sensitive electrical parameter to extract the thermal resistance of the device. The proposed method has been applied to a Schottky-gate HEMT on SiC, for which a thermal resistance of 15.7 ?-mm/W was extracted, a value in good agreement with others reported for similar devices. Comparison with the one obtained from a step response is also done. Finally, the uncertainties of the proposed method related to the pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed.
引用
收藏
页码：891 / 894
页数：4
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