Two-dimensional Bi2S3/MoS2 van der Waals heterostructure for self-powered photodetectors

被引：7

作者：

Hui, Jiangxin ^{[1
]}

机构：

[1] Xian Univ Posts & Telecommun, Sch Automat, Control Engn, Xian, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 01期

关键词：

two-dimensional materials; charge transfer; type-II heterostructure; Bi2S3; MoS2; self-powered photodetectors; BISMUTH SULFIDE; PERFORMANCE; NANOSHEETS; NANORODS; HETEROJUNCTION; GROWTH;

D O I：

10.35848/1882-0786/acaaed

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional (2D) semiconductor materials have been widely applied for optoelectronic devices, but fast charge recombination severely affects device performance. The construction of a 2D heterostructure is a proven strategy for effectively reducing carrier recombination. 2D Bi2S3/MoS2 heterostructure is prepared by a sequential vapor deposition method. This heterostructure displays a fast response/recovery time of 4/15 ms and a high responsivity of 218.3 mu A W-1. The improved photodetection performance is mainly ascribed to the internal electric field-induced efficient charge transfer in the type-II Bi2S3/MoS2 heterostructure. This study provides a guideline to extend other heterostructure photodetectors and improve the photodetection performance.

引用

页数：5

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