TA 0.34DEG/HOUR BULK ACOUSTIC WAVE GYROSCOPE IN 4H SILICON-CARBIDE WITH AN ELEVATED-TEMPERATURE ENHANCED Q-FACTOR OF 4.6 MILLION

被引：3

作者：

Liu, Zhenming ^{[1
,2
]}

Long, Yaoyao ^{[1
]}

Wehner, Charlotte M. ^{[1
]}

Wen, Haoran ^{[2
]}

Ayazi, Farrokh ^{[1
,2
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

[2] StethX Microsyst Inc, Atlanta, GA 30308 USA

来源：

2024 IEEE 37TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, MEMS | 2024年

关键词：

Bulk Acoustic Wave; SiC; Gyroscope; Bias Instability; Navigation on chip; Quality Factor;

D O I：

10.1109/MEMS58180.2024.10439512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive exploration of the first ovenized bulk acoustic wave (BAW) gyroscope implemented in thick monocrystalline silicon-carbide (SiC), showcasing sub-degree bias instability (BI) and superior angle random walk (ARW) compared to state-of-the-art planar silicon counterparts. Notably, the study delves into the positive temperature coefficient of Q-factor (TCQ) observed in semi-solid BAW disk SiC resonators, enabling ovenization at 80 degrees C and achieving a remarkable thermoelastic damping (TED) limited Q of 4.6 million at a high frequency of 3MHz. The findings highlight SiC, specifically in 4H-SiC, as a promising platform for next-generation MEMS precision positioning, navigation, and timing (PNT) devices.

引用

页码：7 / 10

页数：4

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