High-Sensitivity Solar-Blind Photodetector Based on -Ga2O3 Schottky Junction Under Forward and Reverse Bias

被引：16

作者：

Fu, Shihao ^{[1
]}

Wang, Yuefei ^{[1
]}

Gao, Chong ^{[1
]}

Han, Yurui ^{[1
]}

Fu, Rongpeng ^{[1
]}

Wang, Longpu ^{[1
]}

Li, Bingsheng ^{[1
]}

Ma, Jiangang ^{[1
]}

Fu, Zhendong ^{[2
]}

Xu, Haiyang ^{[1
]}

Liu, Yichun ^{[1
]}

机构：

[1] Northeast Normal Univ, Key Lab UV Light Emitting Mat & Technol, Minist Educ, Changchun 130024, Peoples R China

[2] Tianjin Jinhang Tech Phys Inst, Tianjin 300000, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Lighting; Photodetectors; Electrodes; Sputtering; Schottky barriers; Optical films; Metals; beta-Ga2O3; film; photodetector; high sensitivity under forward bias; Schottky junction; ULTRAVIOLET PHOTODETECTORS;

D O I：

10.1109/LED.2023.3297101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Schottky junction solar-blind photodetector (PD) was fabricated on a beta-Ga2O3 film using ITO and Ni as interdigital electrodes. The ITO/beta-Ga2O3/Ni PD showed a rectifying behavior which is attributed to the Ohmic contact of ITO/beta-Ga2O3 and a Schottky contact of beta-Ga2O3/Ni. The ITO/beta-Ga2O3/Ni PD has a high light-to-dark current ratio exceeding 104 under both forward and reverse bias due to the intrinsic energy-band structure of beta-Ga2O3, in which no shallow defect energy levels exist. Under a forward bias of 20 V and 254 nm illumination (40.94 mu W/cm(2)), the ITO/beta-Ga2O3/Ni PD has a high responsivity, detectivity, and external quantum efficiency of 470.62 A/W, 1.11 x 10(15) Jones, and 1.67 x10(5)%, respectively. The relative decrease in performance in reverse bias compared with forward bias is attributed to the increased Schottky barrier of Ni/beta-Ga2O3. In addition, the photocurrent changes almost linearly with applied bias and optical power, indicating that the beta-Ga2O3 film has fewer traps and carrier-recombination centers. Therefore, planar ITO/beta-Ga2O3/Ni PDs are good candidates for monitoring solar-blind radiation.

引用

页码：1428 / 1431

页数：4

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