Anisotropic electrical properties of NiO x /β-Ga2O3 p-n heterojunctions on (2<combining overline>01), (001), and (010) crystal orientations

被引：3
|
作者：
Mudiyanselage, Dinusha Herath [1 ]
Mandia, Ramandeep [2 ]
Wang, Dawei [1 ]
Adivarahan, Jayashree [1 ]
He, Ziyi [1 ]
Fu, Kai [3 ]
Zhao, Yuji [4 ]
Mccartney, Martha R. [5 ]
Smith, David J. [5 ]
Fu, Houqiang [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
[3] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
[4] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 09期
基金：
美国国家科学基金会;
关键词：
gallium oxide; p-n heterojunctions; crystal anisotropy; DIODES;
D O I：
10.35848/1882-0786/acf8ad
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
NiOx/beta-Ga(2)O(3)p-n heterojunctions fabricated on and beta-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification >= 10(9), and turn-on voltages >2.0 V. The device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with and devices. Moreover, it is calculated that the interface trap state densities for and plane devices are 4.3 <bold>x</bold> 10(10), 7.4 <bold>x</bold> 10(10), and 1.6 <bold>x</bold> 10(11 )eV(-1)cm(-2), respectively. These differences in the NiOx/beta-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.
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页数：6
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