Anisotropic electrical properties of NiO x /β-Ga2O3 p-n heterojunctions on (2<combining overline>01), (001), and (010) crystal orientations

被引：3

作者：

Mudiyanselage, Dinusha Herath ^{[1
]}

Mandia, Ramandeep ^{[2
]}

Wang, Dawei ^{[1
]}

Adivarahan, Jayashree ^{[1
]}

He, Ziyi ^{[1
]}

Fu, Kai ^{[3
]}

Zhao, Yuji ^{[4
]}

Mccartney, Martha R. ^{[5
]}

Smith, David J. ^{[5
]}

Fu, Houqiang ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA

[3] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA

[4] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA

[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 09期

基金：

美国国家科学基金会;

关键词：

gallium oxide; p-n heterojunctions; crystal anisotropy; DIODES;

D O I：

10.35848/1882-0786/acf8ad

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NiOx/beta-Ga(2)O(3)p-n heterojunctions fabricated on and beta-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification >= 10(9), and turn-on voltages >2.0 V. The device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with and devices. Moreover, it is calculated that the interface trap state densities for and plane devices are 4.3 <bold>x</bold> 10(10), 7.4 <bold>x</bold> 10(10), and 1.6 <bold>x</bold> 10(11 )eV(-1)cm(-2), respectively. These differences in the NiOx/beta-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

引用

页数：6

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