Mechanism of converting n-type to p-type conductivity in ZnO nanorods array films co-implanted with nitrogen and lithium ions

被引:4
作者
Das, Amaresh [1 ]
Basak, Durga [1 ]
机构
[1] Indian Assoc Cultivat Sci, Sch Phys Sci, Kolkata 700032, India
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2023年 / 298卷
关键词
p -type ZnO; Ion implantation; Acceptor; Li and N dopants; Raman spectroscopy; Photoluminescence; THIN-FILMS; DOPED ZNO; OPTICAL-PROPERTIES; LI; PHOTOLUMINESCENCE; LUMINESCENCE; FABRICATION; HYDROGEN;
D O I
10.1016/j.mseb.2023.116860
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we report a stable p-type conductivity in aqueous chemically grown ZnO nanorods array films coimplanted with N and Li ions. We have successfully achieved p-type conductivity, attaining a hole concentration as high as 8.97 x 1018 cm-3 and a mobility of 0.92 cm2.V- 1.s- 1 by co-implanting N and Li ions at a fluence of 5 x 1014 ions/cm2 for each ion. X-ray photoelectron spectroscopy analysis reveals the formation of NO, LiZn acceptors, and Lii-NO complexes. Furthermore, room temperature photoluminescence and SRIM simulation results confirm the presence of VZn. The formation of Lii-NO complex helps LiZn, VZn, and NO acceptors to actively participate in p-type conduction process. A detailed photoluminescence and Raman spectroscopy analyses together with simulation results reveal that, as the co-implantation fluence increases, excess Lii and implantationinduced structural disorders are produced, resulting in a decrease in the hole concentration. Our study showcases the potential benefits of developing a stable p-type component in ZnO-based electronic devices.
引用
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页数:8
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共 68 条
  • [1] Investigation on P-N dual acceptor doped p-type ZnO thin films and subsequent growth of pencil-like nanowires
    Amiruddin, R.
    Devasia, Sebin
    Mohammedali, D. K.
    Kumar, M. C. Santhosh
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (03)
  • [2] Evidence of lithium-nitrogen interaction in chitosan-based films from X-ray photoelectron spectroscopy
    Arof, AK
    Morni, NM
    Yarmo, MA
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 55 (1-2): : 130 - 133
  • [3] Doping Asymmetry Problem in ZnO: Current Status and Outlook
    Avrutin, Vitaliy
    Silversmith, Donald J.
    Morkoc, Hadis
    [J]. PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1269 - 1280
  • [4] Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse
    Biroju, Ravi K.
    Tilak, Nikhil
    Rajender, Gone
    Dhara, S.
    Giri, P. K.
    [J]. NANOTECHNOLOGY, 2015, 26 (14)
  • [5] Interplay of defects in 1.2 MeV Ar irradiated ZnO
    Chattopadhyay, Soubhik
    Dutta, Sreetama
    Jana, D.
    Chattopadhyay, S.
    Sarkar, A.
    Kumar, P.
    Kanjilal, D.
    Mishra, D. K.
    Ray, S. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
  • [6] Origins of green band emission in high-temperature annealed N-doped ZnO
    Chen, Hui
    Gu, Shulin
    Tang, Kun
    Zhu, Shunmin
    Zhu, Zhenbang
    Ye, Jiandong
    Zhang, Rong
    Zheng, Youdou
    [J]. JOURNAL OF LUMINESCENCE, 2011, 131 (06) : 1189 - 1192
  • [7] Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation
    Das, Amaresh
    Basak, Durga
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (38) : 23858 - 23869
  • [8] Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review
    Das, Amaresh
    Basak, Durga
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (09) : 3693 - 3714
  • [9] Interplay of defects in low energy nitrogen implanted ZnO nanorods
    Das, Amaresh
    Basak, Durga
    [J]. APPLIED SURFACE SCIENCE, 2021, 564
  • [10] Highly enhanced ultraviolet to visible room temperature photoluminescence emission ratio in Al implanted ZnO nanorods
    Das, Amaresh
    Ghosh, Shuvaraj
    Das Mahapatra, Ayon
    Kabiraj, Debdulal
    Basak, Durga
    [J]. APPLIED SURFACE SCIENCE, 2019, 495