Group 14 elements in the Cmcm phase with a direct band structure for photoelectric application

被引:14
作者
Fan, Qingyang [1 ,2 ]
Sun, Yichao [1 ]
Zhao, Yingbo [3 ]
Song, Yanxing [4 ]
Yun, Sining [5 ]
机构
[1] Xian Univ Architecture & Technol, Coll Informat & Control Engn, Xian 710055, Peoples R China
[2] Shaanxi Key Lab Nano Mat & Technol, Xian 710055, Peoples R China
[3] Xian Univ Architecture & Technol, Sch Mech & Elect Engn, Xian 710055, Peoples R China
[4] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
[5] Xian Univ Architecture & Technol, Sch Mat Sci & Engn, Funct Mat Lab FML, Xian 710055, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金; 国家重点研发计划;
关键词
group 14 element allotropes; Cmcm phase; direct band gap; photoelectric material; THEORETICAL INVESTIGATIONS; ELECTRON LOCALIZATION; ELASTIC-CONSTANTS; DEBYE TEMPERATURE; CARBON; SILICON; DIAMOND; ALLOYS; SI; ALLOTROPES;
D O I
10.1088/1402-4896/aca44b
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work presents two novel group 14 element allotropes, oC24 Si-24 and oC24 Ge-24, and the physical properties of oC24 C-24, oC24 Si-24, and oC24 Ge-24 are studied in detail by means of first-principles calculations. The mechanical stability, dynamic stability, and thermodynamic stability of oC24 Si-24 and oC24 Ge-24 are proven by the elastic parameters, phonon spectrum, and relative enthalpy, respectively. According to the B/G value, all oC24 C-24, oC24 Si-24, and oC24 Ge-24 are brittle materials. By analysing the directional dependence of Young's modulus, it is clear that oC24 Si-24 possesses the largest mechanical anisotropy. From the electronic properties, it can be concluded that oC24 Si-24 is a semiconductor material with a direct band gap of 1.047 eV, which suggests that oC24 Si-24 may be suitable to make solar cells. More importantly, the light absorption ability of oC24 Si-24 is stronger than that of diamond Si in the visible light region. In addition, the kappa ( min ) of oC24 Si-24 and oC24 Ge-24 have better thermal conductivity, indicating that oC24 Si-24 and oC24 Ge-24 have great application potential in solar cells, optoelectronic devices and other microelectronic devices.
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页数:12
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共 81 条
[2]   Phonons and related crystal properties from density-functional perturbation theory [J].
Baroni, S ;
de Gironcoli, S ;
Dal Corso, A ;
Giannozzi, P .
REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :515-562
[3]   A SIMPLE MEASURE OF ELECTRON LOCALIZATION IN ATOMIC AND MOLECULAR-SYSTEMS [J].
BECKE, AD ;
EDGECOMBE, KE .
JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) :5397-5403
[4]   Clathrates and beyond: Low-density allotropy in crystalline silicon [J].
Beekman, Matt ;
Wei, Kaya ;
Nolas, George S. .
APPLIED PHYSICS REVIEWS, 2016, 3 (04)
[5]   New hopes for allotropes [J].
Beekman, Matt .
MATERIALS TODAY, 2015, 18 (06) :304-305
[6]   HEXAGONAL DIAMOND - A NEW FORM OF CARBON [J].
BUNDY, FP ;
KASPER, JS .
JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (09) :3437-&
[7]   LOWER LIMIT TO THE THERMAL-CONDUCTIVITY OF DISORDERED CRYSTALS [J].
CAHILL, DG ;
WATSON, SK ;
POHL, RO .
PHYSICAL REVIEW B, 1992, 46 (10) :6131-6140
[8]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[9]   HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DIAMOND HEXAGONAL SILICON IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON [J].
CERVA, H .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (11) :2324-2336
[10]   Enhanced Thermoelectric Properties in a New Silicon Crystal Si24 with Intrinsic Nanoscale Porous Structure [J].
Chae, Kisung ;
Kang, Seoung-Hun ;
Choi, Seon-Myeong ;
Kim, Duck Young ;
Son, Young-Woo .
NANO LETTERS, 2018, 18 (08) :4748-4754