Simulation of a hollow-cathode PECVD process in O2/TMDSO for silicon dioxide deposition - Cross-code validation of 2D plasma model and global plasma model

被引：4

作者：

Tomankova, Kristina ^{[1
,2
]}

Kubecka, Martin

Rivolta, Nicolas ^{[3
]}

Cornil, David ^{[4
]}

Obrusnik, Adam ^{[1
,2
]}

机构：

[1] Masaryk Univ, Fac Sci, Dept Plasma Phys & Technol, Kotlarska 267-2, Brno 61137, Czech Republic

[2] PlasmaSolve, Sukova 49-4, Brno 60200, Czech Republic

[3] AGC Plasma Technol Solut, Rue Louis Bleriot 12, B-6041 Charleroi, Belgium

[4] Univ Namur, 61 Rue Bruxelles, B-5000 Namur, Belgium

来源：

SURFACE & COATINGS TECHNOLOGY | 2023年 / 474卷

关键词：

Global plasma model; 2D plasma model; Hollow cathode; PECVD; TMDSO; CHEMICAL-VAPOR-DEPOSITION; SIO2; THIN-FILMS; COATINGS; SIO2-FILMS;

D O I：

10.1016/j.surfcoat.2023.130069

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate a hollow-cathode plasma system operating in the mixture of O2 and TMDSO using physics- and chemistry-based numerical simulation. Two simulation strategies relevant for hollow-cathode PECVD are developed and cross-correlated - a global plasma model and a 2D plasma model. As a part of this effort, a plasmakinetic system for O2/TMDSO is proposed, based on an existing system for O2/HMDSO. The two simulation approaches are benchmarked against each other, and their respective advantages and disadvantages are discussed. The models are consequently used to provide insight into the plasma dynamics of the hollow-cathode PECVD system and to understand the plasma chemistry of TMDSO. The paper also identifies the appropriate scaling parameter of the investigated HC-PECVD system, which will be practical for its further development. The results are correlated with experimental observations from literature, finding multiple similarities and consistent behavior.

引用

页数：14