An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT

被引：1

作者：

Vadala, Valeria ^{[1
]}

Raffo, Antonio ^{[2
]}

Bosi, Gianni ^{[2
]}

Giofrc, Rocco ^{[3
]}

Colantonio, Paolo ^{[3
]}

Vannini, Giorgio ^{[2
]}

机构：

[1] Univ Milano Bicocca, Dept Phys, Milan, Italy

[2] Univ Ferrara, Dept Engn, Ferrara, Italy

[3] Univ Roma Tor Vergata, Dept Engn, Rome, Italy

来源：

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年

关键词：

HEMT; GaN; microwave measurement; power amplifiers; oscilloscope; EXTRACTION;

D O I：

10.23919/EuMIC58042.2023.10288823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measurement technique, named Dynamic Bias, is presented here using its oscilloscope-based implementation. Some practical issues in implementing such a measurement technique with an oscilloscope will be discussed, and solutions to overcome these problems will be presented. The analysis is carried out using both simulations and measurements. Experimental results are shown for a 0.15 mu m GaN HEMT device with 300-mu m periphery.

引用

收藏

页码：394 / 397

页数：4

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