Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

被引：7

作者：

Yang, Bo ^{[1
,2
]}

Yu, Yizhen ^{[1
,2
]}

Zhang, Guixue ^{[1
,2
]}

Shao, Xiumei ^{[1
,2
]}

Li, Xue ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

来源：

SENSORS | 2023年 / 23卷 / 14期

基金：

中国国家自然科学基金;

关键词：

InGaAs detector; visible-extended; nanostructure; antireflection; Mie;

D O I：

10.3390/s23146556

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A visible-extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible-extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible-extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10-20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500-1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.

引用

页数：12

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