Diamond growth in a high temperature and high pressure Fe-Ni-C-Si system: Effect of synthesis pressure

被引：3

作者：

Liu, Yang ^{[1
]}

Wang, Zhiwen ^{[1
]}

Li, Bowei ^{[1
]}

Zhao, Hongyu ^{[1
]}

Wang, Shengxue ^{[1
]}

Chen, Liangchao ^{[2
]}

Ma, Hongan ^{[1
]}

Jia, Xiaopeng ^{[1
]}

机构：

[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[2] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China

来源：

CHINESE PHYSICS B | 2023年 / 32卷 / 12期

基金：

中国国家自然科学基金;

关键词：

silicon-doped diamond; crystal quality; pressure effect; nitrogen content; 81.05.ug; 61.50.-f; 81.40.Vw; 91.62.La; SINGLE-CRYSTAL DIAMOND; IB DIAMOND; POWDER CATALYST; NITROGEN;

D O I：

10.1088/1674-1056/acf03d

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pressure is one of the necessary conditions for diamond growth. Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality diamonds. This work reports the morphology, impurity content and crystal quality characteristics of silicon-doped diamond crystals synthesized under different pressures. Fourier transform infrared spectroscopy shows that with the increase of pressure, the nitrogen content in the C- center inside the diamond crystal decreases. X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon powder. Raman spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamonds from 1331.18 cm-1 to 1331.25 cm-1, resulting in a decrease in internal stress in the crystal. The half-peak width decreased from 5.41 cm-1 to 5.26 cm-1, and the crystallinity of the silicon-doped diamond crystals improved, resulting in improved quality. This work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds.

引用

页数：7

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