Interface traps, correlated mobility fluctuations, and low-frequency noise in metal-oxide-semiconductor transistors

被引：12
|
作者：
Fleetwood, D. M. [1 ]
机构：
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
来源：
APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 17期
关键词：
RANDOM TELEGRAPH SIGNAL; FIELD-EFFECT TRANSISTORS; DOSE-RATE SENSITIVITY; 1/F NOISE; BORDER TRAPS; RADIATION RESPONSE; DISSOCIATION KINETICS; MICROSCOPIC STRUCTURE; HYDROGEN DIFFUSION; INDIVIDUAL DEFECTS;
D O I：
10.1063/5.0146549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interface traps generally are not considered to be likely sources of low-frequency (LF) noise and/or random telegraph noise (RTN) in metal-oxide-semiconductor (MOS) devices because the longer carrier exchange times of border traps are more consistent with experimental observations. In contrast, correlated mobility fluctuations due to remote Coulomb scattering from charged border traps cannot explain the unexpectedly large LF noise and/or RTN observed in some MOS devices. In this Letter it is proposed that equilibrium fluctuations in interface-trap concentrations caused by hydrogen-induced activation and passivation reactions can lead to enhanced LF noise and RTN. This mechanism adds to other noise sources, including border traps, random dopants, and bulk-Si defect clusters.
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页数：7
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