Interface traps, correlated mobility fluctuations, and low-frequency noise in metal-oxide-semiconductor transistors

被引：12

作者：

Fleetwood, D. M. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 17期

关键词：

RANDOM TELEGRAPH SIGNAL; FIELD-EFFECT TRANSISTORS; DOSE-RATE SENSITIVITY; 1/F NOISE; BORDER TRAPS; RADIATION RESPONSE; DISSOCIATION KINETICS; MICROSCOPIC STRUCTURE; HYDROGEN DIFFUSION; INDIVIDUAL DEFECTS;

D O I：

10.1063/5.0146549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface traps generally are not considered to be likely sources of low-frequency (LF) noise and/or random telegraph noise (RTN) in metal-oxide-semiconductor (MOS) devices because the longer carrier exchange times of border traps are more consistent with experimental observations. In contrast, correlated mobility fluctuations due to remote Coulomb scattering from charged border traps cannot explain the unexpectedly large LF noise and/or RTN observed in some MOS devices. In this Letter it is proposed that equilibrium fluctuations in interface-trap concentrations caused by hydrogen-induced activation and passivation reactions can lead to enhanced LF noise and RTN. This mechanism adds to other noise sources, including border traps, random dopants, and bulk-Si defect clusters.

引用

页数：7

共 142 条

[1] Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [J].

Asenov, A ;

Brown, AR ;

Davies, JH ;

Kaya, S ;

Slavcheva, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) :1837-1852

[2] COMPARISON OF 1/F NOISE IN IRRADIATED POWER MOSFETS MEASURED IN THE LINEAR AND SATURATION REGIONS [J].

AUGIER, P ;

TODSEN, JL ;

ZUPAC, D ;

SCHRIMPF, RD ;

GALLOWAY, KF ;

BABCOCK, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :2012-2017

[3] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].

BERGMAN, K ;

STAVOLA, M ;

PEARTON, SJ ;

LOPATA, J .

PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773

[4]

Bernamont J., 1937, Ann. Phys, V11, P71, DOI [DOI 10.1051/ANPHYS/193711070071, 10.1051/anphys/193711070071]

[5] TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES [J].

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1160-1167

[6] Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses [J].

Bonaldo, Stefano ;

Mattiazzo, Serena ;

Enz, Christian ;

Baschirotto, Andrea ;

Fleetwood, Daniel M. ;

Paccagnella, Alessandro ;

Gerardin, Simone .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (07) :1302-1311

[7] Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses [J].

Bonaldo, Stefano ;

Gerardin, Simone ;

Jin, Xiaoming ;

Paccagnella, Alessandro ;

Faccio, Federico ;

Borghello, Giulio ;

Fleetwood, Daniel M. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) :1574-1583

[8] DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (111) SI-SIO2 INTERFACE DEFECTS [J].

BROWER, KL .

PHYSICAL REVIEW B, 1990, 42 (06) :3444-3453

[9] DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON [J].

BROWER, KL ;

LENAHAN, PM ;

DRESSENDORFER, PV .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :251-253

[10] HOT-ELECTRON-INDUCED HYDROGEN REDISTRIBUTION AND DEFECT GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

BUCHANAN, DA ;

MARWICK, AD ;

DIMARIA, DJ ;

DORI, L .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3595-3608

← 1 2 3 4 5 6 7 8 9 10 →