Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application

In this research, we investigated the threshold voltage (VTH) control by partial polarization of metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5 nm-thick nondoped HfO2 gate insulator utilizing Kr-plasma sputtering for Pt gate electrode deposition. The remnant polarization (2Pr) of 7.2 mu C/cm2 was realized by Kr-plasma sputtering for Pt gate electrode deposition. The memory window (MW) of 0.58 V was realized by the pulse amplitude and width of -5/5 V, 100 ms. Furthermore, the VTH of MFSFET was controllable by program/erase (P/E) input pulse even with the pulse width below 100 ns which may be caused by the reduction of leakage current with decreasing plasma damage.