A Switched-Capacitor, Integrator-Multiplexing, Second-Order Delta-Sigma Modulator Featuring a Single Differential Difference Amplifier for Portable EEG Application
被引:1
|
作者:
Duan, Quanzhen
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R ChinaSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Duan, Quanzhen
[1
]
Kong, Dameng
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin, Peoples R ChinaSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Kong, Dameng
[2
]
Lin, Chenxi
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin, Peoples R ChinaSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Lin, Chenxi
[2
]
Huang, Shengming
论文数: 0引用数: 0
h-index: 0
机构:
Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin, Peoples R ChinaSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Huang, Shengming
[2
]
Meng, Zhen
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Beijing, Peoples R ChinaSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Meng, Zhen
[3
]
Ding, Yuemin
论文数: 0引用数: 0
h-index: 0
机构:
Univ Navarra, Dept Elect & Elect Engn, San Sebastian, SpainSun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
Ding, Yuemin
[4
]
机构:
[1] Sun Yat Sen Univ, Sch Integrated Circuits, Shenzhen, Peoples R China
[2] Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
We present a novel switched-capacitor, integrator-multiplexing, second-order delta-sigma modulator (DSM) featuring a single differential difference amplifier (DDA). Power consumption is low and resolution is high when this DSM is used for portable electroencephalographic applications. A single DDA (rather than a conventional operational transconductance amplifier) with appropriate switch and capacitor architectures is used to create the second-order switched-capacitor DSM. The configuration ensures that the resolution is high. The modulator was implemented using a standard 180nm complementary metal-oxide-silicon process. At a supply voltage of 1.8V, a signal bandwidth of 250Hz and a sampling frequency of 200kHz, simulations demonstrated that the modulator achieved an 82dB peak signal-to-noise-distortion ratio and an effective number of bits of 14.