Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents

被引：7
|
作者：
Lee, Jeong-Min [1 ]
Lee, Seo-Hyun [1 ]
Oh, Jieun [1 ]
Kim, Woo -Hee [1 ]
机构：
[1] Hanyang Univ, ERICA ACE Ctr BK21 4, Dept Mat Sci & Chem Engn, Ansan 15588, Gyeonggi, South Korea
来源：
MATERIALS LETTERS | 2023年 / 333卷
基金：
新加坡国家研究基金会;
关键词：
Ruthenium; Area-selective atomic layer deposition; Aminosilane inhibitor; Surface modification; Growth retardation;
D O I：
10.1016/j.matlet.2022.133574
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal-organic pre-cursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth -per-cycle. Through surface modification of vapor-dosed DEATMS molecules, signif-icant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate.
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页数：4
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