Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents

被引：7

作者：

Lee, Jeong-Min ^{[1
]}

Lee, Seo-Hyun ^{[1
]}

Oh, Jieun ^{[1
]}

Kim, Woo -Hee ^{[1
]}

机构：

[1] Hanyang Univ, ERICA ACE Ctr BK21 4, Dept Mat Sci & Chem Engn, Ansan 15588, Gyeonggi, South Korea

来源：

MATERIALS LETTERS | 2023年 / 333卷

基金：

新加坡国家研究基金会;

关键词：

Ruthenium; Area-selective atomic layer deposition; Aminosilane inhibitor; Surface modification; Growth retardation;

D O I：

10.1016/j.matlet.2022.133574

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal-organic pre-cursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth -per-cycle. Through surface modification of vapor-dosed DEATMS molecules, signif-icant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate.

引用

页数：4

共 37 条

[1] Area-Selective Atomic Layer Deposition of Ruthenium Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents
Lee, Jeong-Min
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[2] Area-selective atomic layer deposition of Ru thin films by chemo-selective inhibition of alkyl aldehyde molecules on nitride surfaces
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[3] Area-selective atomic layer deposition enabled by competitive adsorption
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[9] Hot-Wire-Assisted Atomic Layer Deposition of High-Quality Ru Thin Films in the Absence of Oxidization
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