Demonstration of p-type GaN FinFETs on Silicon Substrates with Ultrahigh Current ON/OFF Ratio of 109 and Reduced Interface Trap Density

This work demonstrated a high output-current density (I-D) of 33 mA/ mm and a record high drain current on/off ratio of 1 x 10(9) p-type GaN Fin Field-Effect Transistor (FinFET) based on a p-GaN/AlN/AlGaNon-Si structure. Besides, a subthreshold swing of 103 mV/dec was obtained owing to the wet pretreatment. Meanwhile, a high extrinsic transconductance of 3.4 mS/mm were acquired. The high ID and high drain current on/off ratio p-type GaN FinFET exhibits the potential to achieve matching with n-GaN transistors in all-GaN integrated circuits.