Argon Plasma Bombardment Induces Surface-Rich Sn Vacancy Defects to Enhance the Thermoelectric Performance of Polycrystalline SnSe

被引：3

作者：

Wu, Chunlu ^{[1
]}

Shi, Xiao-Lei ^{[2
,3
]}

Li, Meng ^{[2
,3
]}

Zheng, Zhuanghao ^{[4
]}

Zhu, Liangkui ^{[1
]}

Huang, Keke ^{[1
]}

Liu, Wei-Di ^{[2
,3
]}

Yuan, Pei ^{[5
]}

Cheng, Lina ^{[6
]}

Chen, Zhi-Gang ^{[2
,3
]}

Yao, Xiangdong ^{[1
,7
,8
]}

机构：

[1] Jilin Univ, Coll Chem, State Key Lab Inorgan Synth & Preparat Chem, Changchun 130012, Peoples R China

[2] Queensland Univ Technol, Sch Chem & Phys, ARC Res Hub Zero Emission Power Generat Carbon Neu, Brisbane, Qld 4000, Australia

[3] Queensland Univ Technol, Ctr Mat Sci, Brisbane, Qld 4000, Australia

[4] Shenzhen Univ, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov,Coll Phys & Optoelect, Shenzhen 518060, Guangdong, Peoples R China

[5] Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350002, Peoples R China

[6] Sun Yat Sen Univ, Inst Green Chem & Mol Engn IGCME, Guangzhou 510275, Guangdong, Peoples R China

[7] Sun Yat Sen Univ SYSU, Sch Adv Energy, Shenzhen Campus, Shenzhen 518100, Peoples R China

[8] Sun Yat Sen Univ SYSU, IGCME, Shenzhen Campus, Shenzhen 518100, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2024年 / 34卷 / 37期

基金：

澳大利亚研究理事会;

关键词：

Ar plasma bombardment; polycrystal; SnSe; thermoelectric; vacancy;

D O I：

10.1002/adfm.202402317

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanoscale defects can induce the effective modulation of carrier concentration, mobility, and phonon scattering to secure high thermoelectric performance in semiconductors. However, it is still limited to effectively controlling nanoscale defects in thermoelectric materials. Here, argon plasma bombardment is employed to introduce a large number of point defects and dislocations in microcrystalline SnSe powders, synthesized by a solvothermal method. After sintering these powders into polycrystalline bulk materials, bulk SnSe shows the ZT increasing by up to 66.7% (from 0.36 to 0.6 at 773 K). Through detailed micro/nanostructure characterizations and first-principles calculations, the underlying mechanism is elucidated for the evaluation of thermoelectric performance. This work provides a deep understanding of the mechanism of nanoscale defects in modulating thermoelectric performance and presents experimental evidence and experience for the design and synthesis of efficient thermoelectric materials, making significant contributions to future green energy technologies. Argon plasma is utilized to induce Sn vacancy defects in SnSe powders, enhancing ZT by 66.7% after sintering into bulk materials. Micro/nanostructure analyses and first-principles calculations elucidate the mechanism, advancing thermoelectric understanding. The findings offer insight into defect modulation for efficient thermoelectric materials, vital for future green energy technologies. image

引用

页数：10