Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

被引：4

作者：

Knezevic, Tihomir ^{[1
]}

Jelavic, Eva ^{[2
]}

Yamazaki, Yuichi ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Makino, Takahiro ^{[3
]}

Capan, Ivana ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Bijenicka 54, Zagreb 10000, Croatia

[2] Univ Zagreb, Fac Sci, Bijenicka 32, Zagreb 10000, Croatia

[3] Natl Inst Quantum Sci & Technol, 1233 Watanuki, Takasaki 3701292, Japan

来源：

MATERIALS | 2023年 / 16卷 / 09期

关键词：

silicon carbide; boron; defects; MINORITY-CARRIER TRAPS; LIFETIME; DIFFUSION; CENTERS;

D O I：

10.3390/ma16093347

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 x 10(15) cm(-3). Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.

引用

页数：8

共 30 条

[1]

Anikin M.M., 1985, FIZ TEKH POLUPROVODN, V13, P114

[2] Deep levels in iron doped n- and p-type 4H-SiC [J].

Beyer, F. C. ;

Hemmingsson, C. G. ;

Leone, S. ;

Lin, Y. -C. ;

Gallstrom, A. ;

Henry, A. ;

Janzen, E. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)

[3] Different roles of carbon and silicon interstitials in the interstitial-mediated boron diffusion in SiC [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

PHYSICAL REVIEW B, 2004, 70 (11) :115203-1

[4] Boron in SiC: Structure and kinetics [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :447-450

[5] DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPY [J].

BRUNWIN, R ;

HAMILTON, B ;

JORDAN, P ;

PEAKER, AR .

ELECTRONICS LETTERS, 1979, 15 (12) :349-350

[6] M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies [J].

Capan, I. ;

Brodar, T. ;

Bernat, R. ;

Pastuovic, Z. ;

Makino, T. ;

Ohshima, T. ;

Gouveia, J. D. ;

Coutinho, J. .

JOURNAL OF APPLIED PHYSICS, 2021, 130 (12)

[7] Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC [J].

Capan, Ivana ;

Brodar, Tomislav ;

Yamazaki, Yuichi ;

Oki, Yuya ;

Ohshima, Takeshi ;

Chiba, Yoji ;

Hijikata, Yasuto ;

Snoj, Luka ;

Radulovic, Vladimir .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 478 :224-228

[8] Some like it shallower -: p-type doping in SiC [J].

Deák, P ;

Aradi, B ;

Gali, A ;

Gerstmann, U .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 235 (01) :139-145

[9] Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors [J].

Dobaczewski, L ;

Peaker, AR ;

Nielsen, KB .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) :4689-4728

[10] Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation [J].

Fur, N. ;

Belanche, Manuel ;

Martinella, C. ;

Kumar, Piyush ;

Bathen, Marianne E. ;

Grossner, U. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) :1892-1899

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